HUASHUO · FETs & Power MOSFETs · MPN HSBB1260
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 37nC@10V |
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 1.06nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 62W |
| Reverse Transfer Capacitance (Crss@Vds) | 940pF |
| RDS(on) | 2.6mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.05nF |
N-Channel 12V 100A 62W PRPAK3x3-8L