HUASHUO HSBB10P15

HUASHUO · FETs & Power MOSFETs · MPN HSBB10P15

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)39nC@10V
Output Capacitance(Coss)2.021nF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)345mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.021nF
TypeP-Channel

Technical details

P-Channel 150V 10A 35W PRPAK3x3-8L

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