HUASHUO · FETs & Power MOSFETs · MPN HSBB0903
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| Gate Charge(Qg) | 15nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6A;4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 7.8W |
| RDS(on) | 100mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.229nF |
N-Channel+P-Channel Array 100V 6A 4.2A 7.8W PRPAK3x3-8L