HUASHUO HSBB02P15

HUASHUO · FETs & Power MOSFETs · MPN HSBB02P15

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Specifications

Gate Charge(Qg)4.5nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)39pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation7.7W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)780mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)400pF
TypeP-Channel

Technical details

P-Channel 150V 2A 7.7W PRPAK3x3-8L

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