HUASHUO · FETs & Power MOSFETs · MPN HSBB0212E
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.5pF |
| RDS(on) | 41mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 340pF |
| Type | N-Channel |
100V 15A 3V 21W 41mΩ@10V 2 N-Channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS