HUASHUO · FETs & Power MOSFETs · MPN HSBB0210
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 3.5nC@10V |
| Current - Continuous Drain(Id) | 2.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 130mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 180pF |
N-Channel Array 100V 2.8A 1.5W PRPAK3x3-8L