HUASHUO · FETs & Power MOSFETs · MPN HSBB0115
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| Gate Charge(Qg) | 44.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 95mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.029nF |
| Type | P-Channel |
P-Channel 100V 12A 35W PRPAK3x3-8L