HUASHUO HSBB0096

HUASHUO · FETs & Power MOSFETs · MPN HSBB0096

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Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)26nC@10V
Output Capacitance(Coss)495pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)1.41nF

Technical details

N-Channel 100V 50A 45W PRPAK3x3-8L

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