HUASHUO HSBA90P02

HUASHUO · FETs & Power MOSFETs · MPN HSBA90P02

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)170nC@4.5V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation150W
RDS(on)2.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)1.3nF
Number1 P-Channel
Input Capacitance(Ciss)10.211nF
TypeP-Channel

Technical details

P-Channel 20V 90A 150W PRPAK5x6-8L

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