HUASHUO HSBA90N15

HUASHUO · FETs & Power MOSFETs · MPN HSBA90N15

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)39nC@4.5V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)9.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.18nF

Technical details

N-Channel 150V 75A 125W PRPAK5x6-8

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