HUASHUO HSBA90N12A

HUASHUO · FETs & Power MOSFETs · MPN HSBA90N12A

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage120V
Current - Continuous Drain(Id)90A
Output Capacitance(Coss)345pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.32nF
TypeN-Channel

Technical details

120V 90A 3V 140W 6.2mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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