HUASHUO · FETs & Power MOSFETs · MPN HSBA90N12
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| Drain to Source Voltage | 120V |
|---|---|
| Gate Charge(Qg) | 39nC@4.5V |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.82nF |
N-Channel 120V 90A 125W PRPAK5x6-8L