HUASHUO HSBA90N02

HUASHUO · FETs & Power MOSFETs · MPN HSBA90N02

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)37nC@10V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation60W
RDS(on)4.5mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)3.05nF
TypeN-Channel

Technical details

N-Channel 20V 90A 60W PRPAK5x6-8L

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