HUASHUO · FETs & Power MOSFETs · MPN HSBA8076A
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 101nC@10V |
| Output Capacitance(Coss) | 1.051nF |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 126W |
| Reverse Transfer Capacitance (Crss@Vds) | 115pF |
| RDS(on) | 2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.56nF |
| Type | N-Channel |
80V 170A 2.9V 126W 2mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS