HUASHUO · FETs & Power MOSFETs · MPN HSBA8070
No reviews yet — be the first to review HUASHUO HSBA8070.
| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 633pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.8pF |
| RDS(on) | 3.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.78nF |
| Type | N-Channel |
80V 100A 1.7V 56W 3.6mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS