HUASHUO · FETs & Power MOSFETs · MPN HSBA8066
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| Gate Charge(Qg) | 29nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 8.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.738nF |
N-Channel 80V 60A 52W PRPAK5x6-8L