HUASHUO HSBA70P06

HUASHUO · FETs & Power MOSFETs · MPN HSBA70P06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)85nC@10V
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
RDS(on)6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 P-Channel
Input Capacitance(Ciss)5.2nF

Technical details

P-Channel 60V 72A 150W PRPAK5x6-8

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