HUASHUO · FETs & Power MOSFETs · MPN HSBA6901
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 12.56nC@4.5V;9.86nC@4.5V |
| Current - Continuous Drain(Id) | 23A;18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF;70pF |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.378nF;1.447nF |
N-Channel+P-Channel Array 60V 23A 18A 42W PRPAK5x6-8L