HUASHUO HSBA6901

HUASHUO · FETs & Power MOSFETs · MPN HSBA6901

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)12.56nC@4.5V;9.86nC@4.5V
Current - Continuous Drain(Id)23A;18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)64pF;70pF
RDS(on)70mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.378nF;1.447nF

Technical details

N-Channel+P-Channel Array 60V 23A 18A 42W PRPAK5x6-8L

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