HUASHUO · FETs & Power MOSFETs · MPN HSBA6566A
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| Gate Charge(Qg) | 26.5nC@10V |
|---|---|
| Drain to Source Voltage | 65V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 43pF |
| RDS(on) | 6.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.67nF |
N-Channel 65V 65A 52W PRPAK5x6-8L