HUASHUO · FETs & Power MOSFETs · MPN HSBA6315
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@4.5V |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 224pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF |
| RDS(on) | 24mΩ@10V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 3.635nF |
| Type | P-Channel |
60V 30A 1.7V 40W 24mΩ@10V 2 P-Channel P-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS