HUASHUO · FETs & Power MOSFETs · MPN HSBA6266
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| Gate Charge(Qg) | 33nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 438pF |
| Current - Continuous Drain(Id) | 78A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.75V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.67nF |
| Type | N-Channel |
60V 78A 1.75V 75W 5.8mΩ@10V 2 N-Channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS