HUASHUO · FETs & Power MOSFETs · MPN HSBA6256
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 478pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 10mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.27nF |
| Type | N-Channel |
N-Channel Array 60V 50A 50W Surface Mount PRPAK5x6-8L