HUASHUO HSBA6224

HUASHUO · FETs & Power MOSFETs · MPN HSBA6224

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)19nC@4.5V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation3.6W
Reverse Transfer Capacitance (Crss@Vds)96pF
RDS(on)16mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)2.427nF

Technical details

N-Channel Array 60V 50A 3.6W PRPAK5x6-8L

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