HUASHUO · FETs & Power MOSFETs · MPN HSBA6224
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 19nC@4.5V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF |
| RDS(on) | 16mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.427nF |
N-Channel Array 60V 50A 3.6W PRPAK5x6-8L