HUASHUO · FETs & Power MOSFETs · MPN HSBA6133
No reviews yet — be the first to review HUASHUO HSBA6133.
| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 225pF |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.328nF |
| Type | P-Channel |
60V 45A 1.8V 68W 18mΩ@10V 1 P-Channel P-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS