HUASHUO · FETs & Power MOSFETs · MPN HSBA6105
No reviews yet — be the first to review HUASHUO HSBA6105.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 69nC@10V |
| Output Capacitance(Coss) | 138pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 51W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.84nF |
| Type | P-Channel |
60V 30A 1.8V 51W 25mΩ@10V 1 P-Channel P-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS