HUASHUO · FETs & Power MOSFETs · MPN HSBA6078
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| Gate Charge(Qg) | 72nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 2.422nF |
| Current - Continuous Drain(Id) | 235A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.75V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.155nF |
| Type | N-Channel |
60V 235A 1.75V 125W 1.1mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS