HUASHUO · FETs & Power MOSFETs · MPN HSBA6076
No reviews yet — be the first to review HUASHUO HSBA6076.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 105nC@10V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 110W |
| RDS(on) | 1.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.98nF |
N-Channel 60V 150A 110W PRPAK5x6-8