HUASHUO · FETs & Power MOSFETs · MPN HSBA6074B
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 107nC@10V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 108pF |
| RDS(on) | 1.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.48nF |
N-Channel 60V 200A 83W PRPAK5x6-8L