HUASHUO · FETs & Power MOSFETs · MPN HSBA6074
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| Gate Charge(Qg) | 102nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 3.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.48nF |
| Type | N-Channel |
N-Channel 60V 100A 83W PRPAK5x6-8L