HUASHUO · FETs & Power MOSFETs · MPN HSBA6070
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 62nC@10V |
| Output Capacitance(Coss) | 952pF |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 83W |
| RDS(on) | 2.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.72nF |
| Type | N-Channel |
60V 125A 1.6V 83W 2.2mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS