HUASHUO HSBA6066

HUASHUO · FETs & Power MOSFETs · MPN HSBA6066

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)438pF
Current - Continuous Drain(Id)78A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.67nF
TypeN-Channel

Technical details

N-Channel 60V 78A 75W PRPAK5x6-8L

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