HUASHUO · FETs & Power MOSFETs · MPN HSBA6064
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 41nC@10V |
| Output Capacitance(Coss) | 405pF |
| Current - Continuous Drain(Id) | 91A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 89W |
| RDS(on) | 4.7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.189nF |
| Type | N-Channel |
60V 91A 1.8V 89W 4.7mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS