HUASHUO HSBA6056

HUASHUO · FETs & Power MOSFETs · MPN HSBA6056

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.27nF

Technical details

N-Channel 60V 60A 50W PRPAK5x6-8L

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