HUASHUO HSBA6054

HUASHUO · FETs & Power MOSFETs · MPN HSBA6054

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)16nC@10V
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)760pF

Technical details

N-Channel 60V 33A 21W PRPAK5x6-8L

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