HUASHUO HSBA6048

HUASHUO · FETs & Power MOSFETs · MPN HSBA6048

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)3.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.458nF

Technical details

N-Channel 60V 85A 83W PRPAK5x6-8L

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