HUASHUO · FETs & Power MOSFETs · MPN HSBA6040
No reviews yet — be the first to review HUASHUO HSBA6040.
| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 245pF |
| RDS(on) | 5.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.706nF |
N-Channel 60V 116A 113W PRPAK5x6-8L