HUASHUO · FETs & Power MOSFETs · MPN HSBA6032A
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 70A |
| Output Capacitance(Coss) | 211pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 181pF |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.207nF |
| Type | N-Channel |
60V 70A 4V 80W 6.3mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS