HUASHUO · FETs & Power MOSFETs · MPN HSBA4909
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| Gate Charge(Qg) | 29nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 323pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 36W |
| RDS(on) | 13mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 3.5nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 40V 15A 36W PRPAK5x6-8L