HUASHUO · FETs & Power MOSFETs · MPN HSBA4903
No reviews yet — be the first to review HUASHUO HSBA4903.
| Gate Charge(Qg) | 6nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 108pF |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 70mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.004nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 40V 26A 35W PRPAK5x6-8L