HUASHUO HSBA4400

HUASHUO · FETs & Power MOSFETs · MPN HSBA4400

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Specifications

Gate Charge(Qg)10nC@4.5V
Configuration-
Drain to Source Voltage40V
Current - Continuous Drain(Id)54A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)17mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.015nF
TypeN-Channel

Technical details

N-Channel Array 40V 54A 41W PRPAK5x6-8L

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