HUASHUO · FETs & Power MOSFETs · MPN HSBA4315
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| Gate Charge(Qg) | 27.9nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 323pF |
| Current - Continuous Drain(Id) | 52A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 52.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF |
| RDS(on) | 12.5mΩ@10V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 3.5nF |
| Type | P-Channel |
40V 52A 1.65V 52.1W 12.5mΩ@10V 2 P-Channel P-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS