HUASHUO · FETs & Power MOSFETs · MPN HSBA4206
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 18.8nC@4.5V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 21W |
| RDS(on) | 8.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 138pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.332nF |
| Type | N-Channel |
N-Channel Array 40V 35A 21W PRPAK5x6-8L