HUASHUO HSBA4204

HUASHUO · FETs & Power MOSFETs · MPN HSBA4204

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Specifications

Gate Charge(Qg)10.7nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
RDS(on)20mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)88pF
Number2 N-Channel
Input Capacitance(Ciss)1.314nF
TypeN-Channel

Technical details

N-Channel Array 40V 30A 2W PRPAK5x6-8L

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