HUASHUO · FETs & Power MOSFETs · MPN HSBA4119
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 190nC@10V |
| Output Capacitance(Coss) | 780pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 3.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 660pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 10.7nF |
| Type | P-Channel |
MOSFET P-Channel 40V 120A 150W Surface Mount PRPAK5x6-8L