HUASHUO HSBA4115

HUASHUO · FETs & Power MOSFETs · MPN HSBA4115

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Specifications

Gate Charge(Qg)27.9nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)323pF
Current - Continuous Drain(Id)52A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
RDS(on)13mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)222pF
Number1 P-Channel
Input Capacitance(Ciss)3.5nF
TypeP-Channel

Technical details

P-Channel 40V 52A 52.1W PRPAK5x6-8L

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