HUASHUO HSBA4113

HUASHUO · FETs & Power MOSFETs · MPN HSBA4113

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Specifications

Gate Charge(Qg)9nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.004nF

Technical details

P-Channel 40V 27A 42W PRPAK5x6-8L

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