HUASHUO HSBA4086

HUASHUO · FETs & Power MOSFETs · MPN HSBA4086

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Specifications

Gate Charge(Qg)128nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.119nF
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)222pF
RDS(on)2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)6.81nF
TypeN-Channel

Technical details

N-Channel 40V 230A 90W PRPAK5x6-8L

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