HUASHUO HSBA4072C

HUASHUO · FETs & Power MOSFETs · MPN HSBA4072C

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)857pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.68nF
TypeN-Channel

Technical details

40V 130A 1.8V 50W 1.5mΩ@10V 1 N-channel N-Channel PRPAK-8(5x6) Single FETs, MOSFETs RoHS

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