HUASHUO HSBA4052

HUASHUO · FETs & Power MOSFETs · MPN HSBA4052

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Specifications

Gate Charge(Qg)5.8nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation27.8W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)6.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 40V 50A 27.8W PRPAK5x6-8L

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