HUASHUO HSBA4050

HUASHUO · FETs & Power MOSFETs · MPN HSBA4050

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)52nC@10V
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation100W
RDS(on)2.6mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)102pF
Number1 N-channel
Input Capacitance(Ciss)3.572nF
TypeN-Channel

Technical details

N-Channel 40V 140A 100W PRPAK5x6-8L

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